Here we show an idealized cell with a small portion of the membrane blown up into an idealized circuit. We see a small piece of the lipid membrane with an inserted gate. We think of the gate as having some intrinsic resistance and capacitance. Now for our simple Hodgkin - Huxley model here, we want to model a sodium and potassium gate as well as the cell capacitance. So we will have a resistance for both the sodium and potassium. In addition, we know that other ions move across the membrane due to pumps, other gates and so forth. We will temporarily model this additional ion current as a leakage current with its own resistance. We also know that each ion has its own equilibrium potential which is determined by applying the Nernst equation. The driving electomotive force or driving emf is the difference between the ion equilibrium potential and the voltage across the membrane itself. Hence, if Ec is the equilibrium potential due to ion c and Vm is the membrane potential, the driving force is Vc - Vm. In Figure 2.2, we see an electric schematic that summarizes what we have just said. We model the membrane as a parellel circuit with a branch for the sodium and potassium ion, a branch for the leakage current and a branch for the membrane capacitance.
From circuit theory, we know that the charge q across a capacitator is q = C E, where C is the capacitance and E is the voltage across the capicitor. Hence, if the capacitance C is a constant, we see that the current through the capacitor is given by the time rate of change of the charge
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| Vc | = | Ic Rc |
| Ic | = |
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| Ic | = | gc(V,t) ( V(t) - Ec(t) ) |
| gc(V,t) | = | g0 mp(V,t) hq(V,t) |
| IL | = | gL ( V(t) - EL ) |
| Im | = |
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= | ax(V) (1 - x(V)) + bx(V) x(V) | ||||
| x(V,0) | = | x0(V) |
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| x(0) | = | x0 |
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| x(0) | = | x0 |
| tx | = |
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| x(0) | = | x0 |
| x(t) | = |
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| gNa(V,t) | = | g0Na m3(V,t) h(V,t) |
| gK(V,t) | = | g0K n4(V,t) |
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| n(t) | = |
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| ah | = | 0.07 e-.05 (V+60.0) | ||||||||
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| bn | = | 0.125 e-0.0125 (V+60.0 |
| voltage | mV | milli volts | 10-3 Volts |
| current | na | nano amps | 10-9 Amps |
| time | ms | milli seconds | 10-3 Seconds |
| concentration | mM | milli moles | 10-3 Moles |
| conductance | µ S | micro Siemens | 10-6 ohms-1 |
| capacitance | nF | nano Fahrads | 10-9 Fahrads |
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| m(0) | = | m¥(V0,0) |
| h(0) | = | h¥(V0,0) |
| n(0) | = | m¥(V0,0) |
| V(0) | = | V0 |
| am | = |
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| ah | = | 0.07 e-.05 (V+60.0) | ||||||||
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| bn | = | 0.125 e-0.0125 (V+60.0 |
| tm | = |
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| th | = |
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| [NA]o | = | 491.0 |
| [NA]i | = | 50.0 |
| [K]o | = | 20.11 |
| [K]i | = | 400.0 |
| gNa(V,t) | = | g0Na m3(V,t) h(V,t) |
| gK(V,t) | = | g0K n4(V,t) |
| g0Na | = | 120.0 |
| g0K | = | 3.6 |
| INa | = | gNA(V,t) ( V(t) - ENA) |
| IK | = | gK(V,t) ( V(t) - EK) |
| IL | = | gL(V,t) ( V(t) - EL) |
| gL | = | 0.3 |
| EL | = | -49.0 |
| IT | = | INA + IK + IL |
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| y(0) | = | y0 |
| y | = |
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| x(t0) | = | x0 |
| x(t) | = |
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= | (ftt + ftx f) f + (fxt + fxx f) f + fx (ft + fx f) |
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£ | (||ftt|| + ||ftx|| ||f||) ||f|| + (||fxt|| + ||fxx|| ||f||) ||f|| + ||fx|| (||ft|| + ||fx|| ||f||) | |||||||
| = | C |
| f0 | = | f(t0,x)) | ||||||
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| fxx0 | = |
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| x(t) | = |
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| x(t0+h) | = |
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| x(t0+h) | = |
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| |e(t)| | £ |
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| f(t) | = |
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| yn+1 | = | yn + hn × F(tn,yn,hn,f) |
| y0 | = | y0 |
| F(tn,yn,hn,f) | = |
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| hnew | = | .18 h (1 + r ||y||¥) |
| gNa(V,t) | = | g0Na mNA2(V,t) hNA(V,t) |
| gK1(V,t) | = | g0K1 mK1(V,t) hK1(V,t) |
| mNA(V,t) | = |
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| m0 | = | mNA¥(EM) |
| mNA(V,t) | = |
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| hNA¥ | = |
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| bNAh | = |
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